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Radiated disturbance characteristics of SiC MOSFET module
Huazhen Huang Ningyan Wang Jialing Wu Tiebing Lu
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Turn-off modes of silicon carbide MOSFETs for short-circuit fault protection
Jianzhong Zhang Haifu Wu Yaqian Zhang Jin Zhao
Vol. 21, No. 2, pp. 475-482, Feb. 2021
10.1007/s43236-020-00181-w
Vol. 21, No. 2, pp. 475-482, Feb. 2021
10.1007/s43236-020-00181-w
Characteristics of SiC inverter powertrains on common-mode EMI noise
Xiaoyu Jia Bitao Dong Hui Wang Changsheng Hu Dehong Xu
Vol. 21, No. 2, pp. 354-363, Feb. 2021
10.1007/s43236-020-00184-7
Vol. 21, No. 2, pp. 354-363, Feb. 2021
10.1007/s43236-020-00184-7
Implementation of three‑phase four‑leg inverter using SiC MOSFET for UPS applications
Jun-Hyeok Jegal Minho Kwon Chang-Yeol Oh Kiryong Kim Jong-Pil Lee
Vol. 21, No. 1, pp. 103-112, Jan. 2021
10.1007/s43236-020-00173-w
Vol. 21, No. 1, pp. 103-112, Jan. 2021
10.1007/s43236-020-00173-w
Novel driver circuit for switching performance improvements in SiC MOSFETs
Xianyun Li Yi Lu Xijun Ni Shuzheng Wang Yu Zhang
Xinjie Tang
Vol. 20, No. 6, pp. 1583-1591, Nov. 2020
10.1007/s43236-020-00132-5
Xinjie Tang
Vol. 20, No. 6, pp. 1583-1591, Nov. 2020
10.1007/s43236-020-00132-5
Short‑circuit protection method for medium‑voltage SiC MOSFET based on gate–source voltage detection
Zhankuo Wang Chaonan Tong Weichao Huang
Vol. 20, No. 4, pp. 1066-1075, Jul. 2020
10.1007/s43236-020-00095-7
Vol. 20, No. 4, pp. 1066-1075, Jul. 2020
10.1007/s43236-020-00095-7
Driver circuit to eliminate bridge leg crosstalk in SiC MOSFETs
Machine learning approach for sorting SiC MOSFET devices for paralleling
Gate driver for parallel connection SiC MOSFETs with over‑current protection and dynamic current balancing scheme
Yimeng Zhang Qingwen Song Xiaoyan Tang Yuming Zhang
Vol. 20, No. 1, pp. 319-328, Jan. 2020
10.1007/s43236-019-00026-1
Vol. 20, No. 1, pp. 319-328, Jan. 2020
10.1007/s43236-019-00026-1
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke Zhibin Zhao Peng Sun Huazhen Huang James Abuogo
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054
Xiang Cui
Vol. 19, No. 4, pp. 1054-1067, Jul. 2019
10.6113/JPE.2019.19.4.1054