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Search: "[ keyword: IGBT ]" (37)
Stochastic PWM methods to inhibit junction temperature rise in IGBT module
Zihui Liu Jiaqing Ma Zhiqin He Qinmu Wu
Vol. 24, No. 4, pp. 565-572, Apr. 2024
10.1007/s43236-024-00778-5
Vol. 24, No. 4, pp. 565-572, Apr. 2024
10.1007/s43236-024-00778-5
SiC IGBT degradation mechanism investigation under HV‑H3TRB tests
Ziming Wu Zongbei Dai Jian Zhou Huafeng Dong Wencan Wang
Feiwan Xie Haoran Wang Jiahui Yan Xiyu Chen Shaohua Yang
Fugen Wu
Vol. 24, No. 2, pp. 305-315, Feb. 2024
10.1007/s43236-023-00726-9
Feiwan Xie Haoran Wang Jiahui Yan Xiyu Chen Shaohua Yang
Fugen Wu
Vol. 24, No. 2, pp. 305-315, Feb. 2024
10.1007/s43236-023-00726-9
Loss and efficiency comparisons of single‑phase full‑bridge inverters according to switch structures
So-Jeong Kong Young-Joo Kim Jin-Su Kim Jae-Hyuck Choi Jun-Young Lee
Vol. 24, No. 2, pp. 281-291, Feb. 2024
10.1007/s43236-023-00719-8
Vol. 24, No. 2, pp. 281-291, Feb. 2024
10.1007/s43236-023-00719-8
Open‑circuit fault diagnosis of three‑phase PWM rectifier circuits based on transient characteristics and random forest classification
RenZhong Shan JingBo Yang ShengLi Huang
Vol. 24, No. 1, pp. 130-139, Jan. 2024
10.1007/s43236-023-00704-1
Vol. 24, No. 1, pp. 130-139, Jan. 2024
10.1007/s43236-023-00704-1
Junction Temperature Estimation Approach Based on TSEPs in Multichip IGBT Modules
Jianxiong Yang Yanbo Che Li Ran Borong Hu Mingxing Du
Vol. 22, No. 9, pp. 1596-1605, Sep. 2022
10.1007/s43236-022-00465-3
Vol. 22, No. 9, pp. 1596-1605, Sep. 2022
10.1007/s43236-022-00465-3
Comparison of junction temperature variations of IGBT modules under DC and PWM power cycling test conditions
Tong An Yanzhong Tian Fei Qin Yanwei Dai Yanpeng Gong
Pei Chen
Vol. 22, No. 9, pp. 1561-1575, Sep. 2022
10.1007/s43236-022-00449-3
Pei Chen
Vol. 22, No. 9, pp. 1561-1575, Sep. 2022
10.1007/s43236-022-00449-3
A snapback‑free reverse‑conducting IGBT with multiple extraction channels
Weizhong Chen Xuwei Lin Shun Li Yao Huang Yi Huang
Zhengsheng Han
Vol. 22, No. 2, pp. 377-382, Feb. 2022
10.1007/s43236-021-00347-0
Zhengsheng Han
Vol. 22, No. 2, pp. 377-382, Feb. 2022
10.1007/s43236-021-00347-0
Junction temperature measurement method for IGBTs using turn‑on miller plateau duration
Chunsheng Guo Shiwei Zhang Lei Wei Hao Li Sijin Wang
Konggang Zhu
Vol. 21, No. 9, pp. 1374-1382, Sep. 2021
10.1007/s43236-021-00275-z
Konggang Zhu
Vol. 21, No. 9, pp. 1374-1382, Sep. 2021
10.1007/s43236-021-00275-z
Short‑circuit and open‑circuit faults monitoring of IGBTs in solid‑state‑transformers using collector‑emitter voltage
Qiuling Cao Yanbo Che Jianxiong Yang Menglai Mi Yaoyao Men
Vol. 21, No. 7, pp. 1052-1060, Jul. 2021
10.1007/s43236-021-00232-w
Vol. 21, No. 7, pp. 1052-1060, Jul. 2021
10.1007/s43236-021-00232-w
Radiated disturbance characteristics of SiC MOSFET module
Huazhen Huang Ningyan Wang Jialing Wu Tiebing Lu
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4
Vol. 21, No. 2, pp. 494-504, Feb. 2021
10.1007/s43236-020-00187-4